Ceccarelli, Lorenzo



PROJECT TITLE: Advanced Modeling of SiC Power MOSFETs aimed to the Reliability Evaluation of Power Modules


PhD period: 2017.10.01 – 2019.05.14.
Section: Power Electronic Systems
Research Programmes: Efficient and Reliable Power Electronics 
Supervisor: Francesco Iannuzzu
Contact Information

Collaborators: Danfoss, Grundfos, KK Wind Solutions, Vestas, University of Arkansas.
Funding: Det Obelske Familiefond, APETT project.

ABSTRACT

The aim of this Ph.D. project is to investigate the reliability and ruggedness of power electronic devices and modules based on Silicon Carbide (SiC), a promising wide bandgap semiconductor material, which is currently considered one of the most effective replacements to traditional Silicon in many power applications. The project will focus on circuit-oriented and numerical modeling and simulation techniques, as well as on an extensive experimental characterization and testing of commercially available devices, performed in the laboratory under a wide range of operating conditions. The knowledge acquired from the characterization activity will be employed in the development of new models, accounting for detailed electro-thermal behavior and degradation effects, as well as the implementation of a tool for the reliability evaluation of SiC MOSFET power modules.

Papers

Publications in journals and conference papers may be found at VBN.