Guest lecture by Dr. Francesco Velardi, Part 2
18.09.2019 kl. 09.30 - 11.30
There will be a guest lecture on September 18
RELIABILITY OF SILICON CARBIDE BASED POWER DEVICES IN RADIATION ENVIRONMENT
Dr. Francesco Velardi, University of Cassino, Italy
Silicon Carbide is an attractive wide band-gap semiconductor material for high-frequency, high temperature and high-power applications. Its critical electric field is almost ten times higher than that of silicon and allows the design of power devices with active layers much thinner and more doped than silicon devices with the same blocking capability. The advantage in terms of lower on-resistance, lower parasitic capacitance, and lower conduction losses explains the considerable interest shown by designers of power electronics converters in recent years.
The wider band-gap also confers a higher radiation immunity to these semiconductors. When an energetic particle hits a semiconductor, it releases a portion of its energy to the lattice, if this energy is larger than the band-gap, an electron-hole couple can be created. The wider the band-gap is, the lower concentration of electron-hole couples can be generated, reducing the effects of an uncontrolled current. Although wide band-gap semiconductors have superior rad-hard properties, the power devices based on these semiconductors them show a superior radiation sensitivity concerning their silicon counterparts. This feature is ascribable to their thinner active region that can be easily entirely traversed by the relatively low energy ion species (tens of MeV) that can be generated in such a device by energetic protons or neutrons by spallation. This observation is cause for concern about a possible intrinsic weakness of these devices to Single Event Effects (SEEs) induced by ion impacts.
The lecture is composed of two parts. In the first part, the lecture aims to provide the basic concepts of ionizing radiation and its effects on silicon-based power devices. Regarding the second part, the lecture offers an advanced study on the SEE reliability of new generation silicon carbide-based power devices available on the market.
Single Event Effects in Silicon Carbide Based Power Devices
The Power Conversion
The Wide Band-Gap Semiconductors
Single Event Burnout in SiC Schottky Diodes
The SiC Schottky diode
The Experimental Data
The Electrical Simulation Study
The Thermal Simulation Study
Single Event Effects in SiC Power MOSFETs
The SiC Power MOSFET
The Latent Gate Damage: Experimental Data and Simulation Study
The Progressive Drain Damage
Single Event Burnout in SiC Power MOSFETs
ABOUT THE LECTURER
Francesco Velardi received the Laurea degree in electronic engineering with a thesis on the identification of complex nonlinear dynamic systems from the University of Naples Federico II, Naples, Italy, in 1999, and the Ph.D. degree in electrical and information engineering from the University of Cassino and Southern Lazio, Cassino, Italy, in 2003. He is currently a Researcher with the University of Cassino and Southern Lazio. His current research interests include modeling, simulation, and reliability study of power devices. His collaboration with ASI, ESA, CNES, INFN, ENEA, SIEMENS, ANSALDO BREDA, ST-MICROELECTRONICS, FAIRCHILD led to the publication of more than 50 international papers.
THE GUEST LECTURE WILL TAKE PLACE IN PON 111 IN room 1.031 AND ALL ARE WELCOME.
Department of Energy Technology
Pontoppidanstræde 111, room 1.031