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Events at Department of Energy Technology

Industrial/PhD Course: Modern IGBT gate driving methods for Enhancing Reliability of Power Converters

Time

09.09.2019 kl. 08.30 - 10.09.2019 kl. 16.00

Description

Organizer

Professor Francesco Iannuzzo – Aalborg University

Lecturer

Professor Francesco Iannuzzo – Aalborg University

ECTS: 2

Description

After almost three decades of development, Insulated Gate Bipolar Transistors (IGBTs) are widely used in many high-power industrial applications. The reliability issues have been studied by employing solutions in active and passive components, mechanical structures, packaging designs and control strategies. Meanwhile, the complex and harsh working conditions are demanding for higher reliability of the power conversion systems. Along with the development of IGBT modules, gate drivers have been improved dramatically over the years, significantly contributing to reliability improvement. In fact, as an important interface between IGBT modules and controllers, modern gate drivers do not only can provide optimal switching signals, but also monitor the operation status of IGBT modules themselves. In particular, benefiting from the understanding of semiconductor behavior matured over the years, both wear status and abnormal events can be monitored and detected, respectively, thanks to modern IGBT gate driver technologies. This course has presented an overview of state-of-the-art advanced gate driver techniques for enhancing reliability of IGBT modules. Broadly speaking, methods can be classified in detection methods, optimization methods and protection methods. The course will cover the following lectures:

L1: Basic IGBT gate driving concepts

  1. Voltage-source gate drivers
  2. Current-source gate drivers
  3. Optimization and protection principles

L2: Fault detection and protection methods

  1. Voltage and current overshoot
  2. Overload and short circuit
  3. Gate voltage limitation

L3: Active gating methods for enhancing switching characteristics

  1. Closed-loop control methodology
  2. Closed-loop control implementations

L4: Active thermal control methods using IGBT gate driver

  1. Principles for thermal mitigation method
  2. Thermal mitigation methods
  3. Junction temperature estimation methods

Prerequisites

Basic knowledge of power device and power converter operation

Form of evaluation

The participants will be grouped in teams of 4-5 people and asked to design an original gate driver for a given application. Students will be asked to give a presentation at the end of the course, with a final evaluation of the contribution.

Registration

https://phd.moodle.aau.dk

Price

6000 DKK for PhD students outside of Denmark and 8000 DKK for the Industry.

Host

Department of Energy Technology

Address

Aalborg University, Pontoppidanstræde 103, room 4.112, 9220 Aalborg East