Events at Department of Energy Technology

Industrial/PhD Course: Modern IGBT gate driving methods for Enhancing Reliability of Power Converters

Time

30.08.2021 kl. 08.30 - 31.08.2021 kl. 16.30

Description

Organizer:

Prof. Francesco Iannuzzo, fia@et.aau.dk, Aalborg University, Denmark

Lecturers: 

Prof. Francesco Iannuzzo, fia@et.aau.dk, Aalborg University 

ECTS:  2 

Description: 

After almost three decades of development, Insulated Gate Bipolar Transistors (IGBTs) are widely used in many high-power industrial applications. The reliability issues have been studied by employing solutions in active and passive components, mechanical structures, packaging designs and control strategies. Meanwhile, the complex and harsh working conditions are demanding for higher reliability of the power conversion systems. Along with the development of IGBT modules, gate drivers have been improved dramatically over the years, significantly contributing to reliability improvement. In fact, as an important interface between IGBT modules and controllers, modern gate drivers do not only can provide optimal switching signals, but also monitor the operation status of IGBT modules themselves. In particular, benefiting from the understanding of semiconductor behavior matured over the years, both wear status and abnormal events can be monitored and detected, respectively, thanks to modern IGBT gate driver technologies. This course has presented an overview of state-of-the-art advanced gate driver techniques for enhancing reliability of IGBT modules. Broadly speaking, methods can be classified in detection methods, optimization methods and protection methods. 

The course will cover the following lectures: 

L1: Basic IGBT gate driving concepts 

  1. Voltage-source gate drivers 
  2. Current-source gate drivers 
  3. Optimization and protection principles 

L2: Fault detection and protection methods 

  1. Voltage and current overshoot 
  2. Overload and short circuit 
  3. Gate voltage limitation 

L3: Active gating methods for enhancing switching characteristics 

  1. Closed-loop control methodology 
  2. Closed-loop control implementations 

L4: Active thermal control methods using IGBT gate driver 

  1. Principles for thermal mitigation method 
  2. Thermal mitigation methods 
  3. Junction temperature estimation methods 

Prerequisites: 

Basic knowledge of power device and power converter operation. 

Form of evaluation: 

The participants will be grouped in teams of 4-5 people and asked to design an original gate driver for a given application. Students will be asked to give a presentation at the end of the course, with a final evaluation of the individual contribution. 

 

The course it is going to be a hybrid with the possibility to participate remotely and in person.

Price

6000 DKK for PhD students outside of Denmark and 8000 DKK for the Industry.

Host

Department of Energy Technology, Aalborg University

Address

Aalborg University, Pontoppidanstræde 101, room 1.001, 9220 Aalborg East

Registration Deadline

10.08.2021 kl. 00.00

Register at

lmle@et.aau.dk

More information

https://phd.moodle.aau.dk