PROJECT TITLE: Development of Commercial GaN Device for Power Application
PhD period: 2015.04.01 - 2018.03.31.
Section: Electrical Machines
Research Programme: Efficient and Reliable Power Electronics
Supervisor: Stig Munk-Nielsen
Co-Supervisor: Christian Uhrenfeldt
Collaborators: Department of Physics and Astronomy and iNANO, Aarhus University, Topsil Semiconductor Materials A/S,
North Carolina State University, United States, Delft University of Technology, Netherlands, Institute of Electronic Materials, Technology, Poland.
Humanity has been prospering after the Industrial Revolution in Europe. Although it has brought more convenience to our world, we faced the serious problem called an energy scarcity under finite resources on earth. With the mounting concern over energy depletion, there has been continued effort to solve this in various fields. As one way of these trends, interest in high efficiency power device is constantly increasing in the area of semiconductor power devices.
Until recently, most power devices based on silicon material, but the technology of silicon devices already approached the physical limit. Therefore, people began turning to WBG(Wide Band-Gap) materials. They can allow power electronic components to have better performance than their silicon based counterparts. For the last few years, diverse researches in this area have been underway because of their owned benefits. In this spotlight, GaN(Gallium Nitride) become one of the highly anticipated WBG materials.
Firstly, the purpose of this project is to get the technology to develop a commercial GaN device. The evaluation for result will progress not only in a single device but in SMPS (Switched-Mode Power Supply) system level. We hope that this GaN device research will be able to contribute to future earth as one of green technologies.
Publications in journals and conference papers may be found at VBN.