PROJECT TITLE: Quantitative Impact of Abnormal Conditions on Remaining Useful Lifetime of SiC MOSFET Power Module and Possible Mitigation Strategies
PhD period: 2017.12.01 – 2020.11.30.
Section: Power Electronic Systems
Research Programmes: Efficient and Reliable Power Electronics
Supervisor: Francesco Iannuzzu
Co-Supervisor: Paula Diaz Reigosa
Funding: China Scholarship Council (CSC) and the Department of Energy Technology.
Silicon Carbide (SiC) devices are becoming more and more popular in power electronic applications, thanks to the unprecedented performances comparing to traditional Silicon-based devices. The superior physical properties especially higher maximum operating temperature and switching speed could minimize losses and enable more compact and denser power converters. As high cost hinders its application, accurate and confident prediction of Remaining Useful Lifetime (RUL) will enable reliability-based design of new-generation SiC power converters.
This PhD project will evaluate first the SiC MOSFET Power Module under abnormal conditions, and their implications on its reliability. Furthermore, the impact of different types of abnormal condition on RUL would be estimated quantitatively. The project will focus successively on modeling possible related degradation of both device and packaging. Finally, the degradation mechanism obtained from the model will be exploited to enhance the lifetime prediction method and to propose mitigation strategies against abnormal conditions at different design levels.
Publications in journals and conference papers may be found at VBN.